6-inch Silicon Carbide High-Temperature Annealing Furnace
Function
Technical Parameters
Bhadra? Vertical High-Temperature Annealing Furnace HBA150
Advantage
Activate the doped impurity atom
The trench is smooth after the etching process
or call:
86-18924169069 / 020-31569374
Technical Parameters
Wafer size : 4 and 6 inches
Substrate material : Silicon Carbide (SiC)
Maximum wafer capacity: 50 wafers per batch
Applicable fields: Power semiconductors, substrate materials, research
