6-inch Silicon Carbide High-Temperature Oxidation Furnace
Function
Technical Parameters
Bhadra? Vertical High-Temperature Oxidation Furnace HBO150
Advantage
High temperature oxidation process
DCE cleaning removes mobile ion action and medium&high temperature annealing process
or call:
86-18924169069 / 020-31569374
Technical Parameters
Wafer size : 4 and 6 inches
Substrate material : Silicon Carbide (SiC)
Maximum wafer capacity: 50 wafers per batch
Applicable fields: Power semiconductors, substrate materials, research
